reactive magnetron sputtering中文是什么意思

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中文翻译
造句

反应磁控管溅散；反应磁控溅射

magnetron sputtering 磁控管溅射; 磁控溅射
reactive sputtering 反应溅射法; 往复溅射
coxial magnetron sputtering system 同轴磁控管溅镀系统
exb magnetron sputtering system 直交电磁场型溅镀系统
magnetron sputtering system 磁控管溅镀系统
planar magnetron sputtering system 平面磁控管溅镀系统
reactive sputtering source 反应溅射源
reactive sputtering system 反应性溅镀系统
sputtering 飞溅; 溅镀金属; 溅射; 喷溅涂覆法; 喷涂
magnetron n. 【无线电】磁控(电子)管。 rising-sun magnetron旭日型磁控管。
reactive adj. 1.反动的，倒退的，复古的。 2.反应的；反作用的；反冲的；【电学】电抗的；【化学】反应性的，活性的。 a reactive current 无效电流。 reactive power 无功电力。 reactivity n. adv. -ly ,-ness n.
anode sputtering 阳极溅射
bias sputtering 偏压溅射; 偏置溅射
biasing sputtering 偏压溅射
bulk sputtering 容积溅射
catbode sputtering 阴极溅射
cathod sputtering 阴极溅射
cathode sputtering 等离子阴极溅射; 阴极爆蚀; 阴极溅射
cathodic sputtering 阴极溅散; 阴极溅射
catholic sputtering 阴极溅射法
catodic sputtering 阴极溅射
co-sputtering 共溅射
collimate sputtering 准直溅镀
cool sputtering 冷溅射
diode sputtering 二极管溅射; 二极溅射

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例句与用法

Photo-induced catalytic characteristics of tio2 thin films deposited by dc reactive magnetron sputtering
直流反应磁控溅射制备二氧化钛薄膜的光催化性研究
Ultrathin aluminum films were prepared by dc reactive magnetron sputtering . the target was made by 99.999 % pure aluminum
采用直流磁控溅射法溅射纯度为99.999%的铝靶制备了超薄铝膜。
In the first part of the thesis tin film in different n2 partial pressure prepared by reactive magnetron sputtering is studied
本文首先研究了磁控溅射法在不同氮气分压下所制备的tin薄膜。
The results indicate that it has an excellent surface . aln thin film was prepared from an aluminum target by dc and af reactive magnetron sputtering in nitrogen gas mixed with argon gas
氮化铝薄膜样品是利用高纯铝靶,在氮气加氩气气氛下用直流和射频反应磁控溅射法制备的。
Three kinds of different methods, namely anode oxidation, micro-arc oxidation and dc reactive magnetron sputtering, were employed to treat aluminum substrate which is used for power electronic devices in order to get an insulating surface by form a layer of aluminum nitride ( aln ) or aluminum oxide ( al2o3 ) film
本文分别采用阳极氧化法、微弧氧化法和磁控反应溅射沉积氮化铝薄膜的方法对功率电子器件用金属铝基板表面进行绝缘化处理。
Firstly, the tio2 thin films are deposited by dc reactive magnetron sputtering apparatus, and characterlized by n & k analyzer1200, x-ray diffraction spectroscopy ( xrd ), scanning electronic microscopy ( sem ), alpha-step500 . and it was analyzed that the effect on performance and structure of films with the change of argon flow, total gas pressure, the substrate-to-target distance and temperature
第一、应用稳定的直流磁控溅射设备制备tio2减反射薄膜并通过n&kanalyzer1200薄膜光学分析仪、x射线衍射分析(xrd)、扫描电子显微镜(sem)、alpha-step500型台阶仪等仪器对薄膜进行表征,分析氧分压、总气压、工作温度、靶基距等制备工艺参数对薄膜性能结构的影响。
Because of it is not sensitive to hydrogen at normal temperature, so tungsten oxide with doped catalyst to improving its hydrogen response was adopted . the tungsten oxide films with pt and pdcl2 catalyst were prepared with sol-gel and dc reactive magnetron sputtering methods . simultaneously the optical property and surface structure of the catalyst films was studied
由于三氧化钨薄膜在常温下对氢气不敏感,本文采用掺杂改性来改善三氧化钨薄膜材料的氢敏性能,分别采用直流磁控溅射法和溶胶凝胶法制备了均匀的三氧化钨掺铂和掺钯薄膜材料,并对它的光学性质、表面形态、结构等进行了深入的研究。

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Last modified time:Fri, 15 Aug 2025 00:29:56 GMT